In this project, we obtain Level 3 SPICE simulation parameters from measured data of our device, and apply them to the following basic circuit. Level 3 variations are given extensive considerations.
DCsweep, Transfer Characteristics, and Output Characteristics measurements are made on our project circuit, which follows. Rb is made a smaller value for Xfer and Output characteristics, for example about 1k.
NMOS is from this chip, pins 6, 7, and 8.
Measured data are stored as Global Variables.
Parameters – Extraction always uses the Level 3 Version as to be applied. The 
selection applies to the simulation step shown just below. It selects by way of the Global Variable 
(binary) K= 1 or K=KAPPA, for AIM spice or LTspice, respectively, for the Ep form. (PSpice uses KAPPA.) The button 
when selected to binary 1 sends a parameter file for the simulators. Upper UCRIT vales are for K = KAPPA, lower values are selected for K = 1.
Ep is used in the final Level 3 simulator stage. An alternative is to assign Ep according to other uses, including Ep = 0.
Curve fit to xfer characteristic X, for UO, sum. Slope fit finds VTO.
Slope fit to oc, sat region, finds KAPPA.
Sample NMOS Parameters – This runs under N_P_pars.vi above.
Measured amp data, Global Variable, DCSweep, sample.
DCsweep with Level 3 simulation. Note that Data oc is approximately mid range to the application range. Here, the LabVIEW simulator uses Ep = 0 (lc = 0) or Ep = Vdsat/Leff, with similar results. This is equivalent to basic Level 3 (VMAX = 0) for the output (channel-length modulation) but here, the effect of velocity-saturation effect is still present.
Following are Simulations comparing LabVIEW with AIM spice and LTspice, based on their respective versions of Level 3 SPICE. The simulators are discussed, for example, here. In the above LabVIEW simulation, Ep = Vdsat/Leff.
Compare simulation, LTspice, with data, and AIM spice with data.
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